Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

Author: Hbib H.   Bonnaud O.   Gauneau M.   Hamedi L.   Marchand R.   Quemerais A.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.310, Iss.1, 1997-11, pp. : 1-7

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