Formation of nanoscale trenches and wires as a pathway to phase-separation in strained epitaxial Ge-Sn alloys

Author： Zhang J.   Deng X.   Swenson D.   Hackney S.A.   Krishnamurthy M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.357, Iss.1, 1999-12, pp. : 85-89

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Nanoscale phase separation of GeS 2 glass

By Cai Liuchun   Boolchand P.  

Philosophical Magazine B, Vol. 82, Iss. 15, 2002-10 ,pp. : 1649-1657

Taylor & Francis Ltd

Access to resources Recommend Favorite

Dislocation pattern formation in epitaxial structures based on SiGe alloys

By Yugova T.G.   Vdovin V.I.   Mil'vidskii M.G.   Orlov L.K.   Tolomasov V.A.   Potapov A.V.   Abrosimov N.V.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 112-115

Elsevier

Access to resources Recommend Favorite

Epitaxial Growth of Strained Ge Films on GaAs(001)

By Salazar-Hernandez B.   Vidal M.A.   Navarro-Contreras H.   Vazquez-Lopez C.  

Thin Solid Films, Vol. 352, Iss. 1, 1999-09 ,pp. : 269-272

Elsevier

Access to resources Recommend Favorite

Epitaxial growth of strained Mn5Ge3 nanoislands on Ge(001)

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 8, 2015-08 ,pp. : 1854-1859

John Wiley & Sons Inc

Access to resources Recommend Favorite

Shift in elastic phase boundaries due to nanoscale phase separation in network glasses: the case of Ge x As x S 1 - 2 x

By Qu Tao   Boolchand P.  

Philosophical Magazine, Vol. 85, Iss. 8, 2005-03 ,pp. : 875-884

Taylor & Francis Ltd

Access to resources Recommend Favorite