Author: Pchelyakov O.P. Bolkhovityanov Y.B. Dvurechenskii A.V. Nikiforov A.I. Yakimov A.I. Voigtlander B.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.367, Iss.1, 2000-05, pp. : 75-84
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Fabrication of Silicon/Germanium superlattice by ion-beam sputtering
By Sasaki K. Takahashi Y. Ikeda T. Hata T.
Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. :
Bistable diodes grown by silicon molecular beam epitaxy
By Zhu X. Zheng X. Pak M. Tanner M.O. Wang K.L.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
Molecular beam epitaxy of Ru 2 Si 3 on silicon
By Lenssen D. Lenk S. Bay H.L. Mantl S.
Thin Solid Films, Vol. 371, Iss. 1, 2000-08 ,pp. :
Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy
Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. :