The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Author： Horng G.-J.   Chang C.-Y.   Ho C.   Lee C.-Y.   Huang T.Y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.374, Iss.1, 2000-10, pp. : 80-84

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 588-591

Trans Tech Publications

Access to resources Recommend Favorite

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 606-609

Trans Tech Publications

Access to resources Recommend Favorite

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 577-581

Trans Tech Publications

Access to resources Recommend Favorite

Schottky barrier height dependence on the silicon interlayer thickness of Au\Si\n-GaAs contacts : chemistry of interface formation study

By Ivanco J.   Almeida J.   Coluzza C.   Zwick F.   Margaritondo G.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 407-411

Elsevier

Access to resources Recommend Favorite

Electrical characterization of 100 MeV heavy ion irradiated Au/p-Cu1.4S Schottky barrier diodes

By Sagade Abhay   Deshpande N. G.   Gudage Y. G.   Singh F.   Sharma Ramphal  

Radiation Effects and Defects in Solids, Vol. 164, Iss. 1, 2009-01 ,pp. : 31-37

Taylor & Francis Ltd

Access to resources Recommend Favorite