Author： Fissel A. Kaiser U. Schroter B. Krauszlich J. Richter W.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.380, Iss.1, 2000-12, pp. : 89-91
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE
By Joelsson K.B. Ni W.-X. Pozina G. Hultman L. Hansson G.V.
Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. :
Access to resources
Recommend
The dielectric function of some low-dimensional Si and Ge structures
By Polatoglou H.M. Vlachoudis V.
Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. :
MBE growth of quantum-size Si-dots on SiC(0001) monitored by RHEED
By Fissel A. Pfennighaus K. Richter W.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :
MBE-growth peculiarities of fluoride (CdF 2 -CaF 2 ) thin film structures
Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. :