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Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process

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Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 149-154

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Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O 3 thin films

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Thin Solid Films, Vol. 446, Iss. 2, 2004-01 ,pp. : 200-204

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Effect of oxygen content and thickness of sputtered RuO x electrodes on the ferroelectric and fatigue properties of sol-gel PZT thin films

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Ferroelectric properties of crystalline oriented Pb(Zr,Ti)O 3 thin films prepared by sol-gel technique

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