Highly reliable gate oxidation using catalytic water vapor generator (WVG) for MOS device fabrication

Author： Ohkawa T.   Nakamura O.   Aharoni H.   Ohmi T.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.405, Iss.1, 2002-02, pp. : 290-299

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Scalable Fabrication of Highly Active and Durable Membrane Electrodes toward Water Oxidation

By  

SMALL, Vol. 14, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 464-467

Trans Tech Publications

Access to resources Recommend Favorite

Fabrication of a depletion mode GaAs MOSFET using Al 2 O 3 as a gate insulator through the selective wet oxidation of AlAs

By Jun B.-K.   Kim D.-H.   Leem J.-Y.   Lee J.-H.   Lee Y.-H.  

Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 229-232

Elsevier

Access to resources Recommend Favorite

3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 493-496

Trans Tech Publications

Access to resources Recommend Favorite

Catalytic Water Oxidation by Iridium‐Modified Carbonic Anhydrase

By  

CHEMISTRY - AN ASIAN JOURNAL, Vol. 13, Iss. 3, 2018-02 ,pp. : 334-341

John Wiley & Sons Inc

Access to resources Recommend Favorite