Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Author： Feng Z.C. Zhang X. Chua S.J. Yang T.R. Deng J.C. Xu G.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.409, Iss.1, 2002-04, pp. : 15-22

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

By Xu D. Yang H. Li J.B. Li S.F. Zhao D.G. Wang Y.T. Sun X.L. Wu R.H.

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 279-282

Elsevier

Access to resources Recommend Favorite

Structural and optical properties of InP/GaAs strained heterostructures grown by metal-organic chemical vapor deposition

By Kim T.W. Jung M. Park T.H. Cho J.W. Park H.L.

Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 36-39

Elsevier

Access to resources Recommend Favorite

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

By Zheng L.X. Yang H. Xu D.P. Wang X.J. Li X.F. Li J.B. Wang Y.T. Duan L.H. Hu X.W.

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 251-255

Elsevier

Access to resources Recommend Favorite

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

By Sun X.L. Wang Y.T. Yang H. Li J.B. Zheng L.X. Xu D.P. Wang Z.G.

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 237-240

Elsevier

Access to resources Recommend Favorite

Metalorganic chemical vapor phase epitaxy and structural properties of Ga_1-xP_xN on GaN/Si(111) substrates

By Fehse K. Dadgar A. Veit P. Bläsing J. Krost A.

Applied Physics A, Vol. 82, Iss. 4, 2006-03 ,pp. : 733-735

Springer Publishing Company

Access to resources Recommend Favorite