Spectroscopic ellipsometry studies of buried CoSi 2 layers in Si formed by ion implantation with a metal vapor vacuum arc ion source

By Guo W.S.  

Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. : 280-283

Elsevier

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Self-ordering of CoSi 2 precipitates and epitaxial layer growth of CoSi 2 on Si(100)

By Mantl S.   Hacke M.   Bay H.L.   Kappius L.   Mesters S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 251-255

Elsevier

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Study of structure and optical properties of -FeSi 2 precipitates formed by ion-implantation of Fe + in Si(100) and effects of co-implantation of Fe + and Si + in amorphous SiO 2

By Oyoshi K.   Lenssen D.   Carius R.   Mantl S.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 194-201

Elsevier

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Silicide formation in cobalt/amorphous silicon, amorphous Co-Si and bias-induced Co-Si films

By Shim J.Y.   Park S.W.   Baik H.K.  

Thin Solid Films, Vol. 292, Iss. 1, 1997-01 ,pp. : 31-39

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The growth of an intermediate CoSi phase during the formation of epitaxial CoSi 2 by solid phase reaction

By Falke M.   Gebhardt B.   Beddies G.   Teichert S.   Hinneberg H.-J.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 201-204

Elsevier

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