State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

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Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 101-104

Elsevier

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A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

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Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 117-122

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Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films

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Diffusion of copper through dielectric films under bias temperature stress

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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

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