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Elsevier

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Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy

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Metal-organic chemical vapor deposition of copper using hydrated copper formate as a new precursor

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The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films

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Encapsulating the electroluminescent phosphor micro-particles using a pulsed metal-organic chemical vapor deposition process in a fluidized bed

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