Electrical characterization of defects induced by 12 MeV electrons in p-type Si-SiO 2 structures

Author： Stefanov K.G.   Kaschieva S.   Karpuzov D.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.51, Iss.2, 1998-10, pp. : 235-237

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