Author： Sasaki K. Takada T. Yoshida Y.
Publisher： Elsevier
ISSN： 0042-207X
Source： Vacuum, Vol.59, Iss.2, 2000-11, pp. : 672-677
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD
By Sasaki K. Tomoda H. Takada T.
Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. :
Access to resources
Recommend
Deposition of large area amorphous silicon films by ECR plasma CVD
By Ueda Y. Inoue Y. Shinohara S. Kawai Y.
Vacuum, Vol. 48, Iss. 2, 1997-02 ,pp. :
150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Large area microcrystalline silicon films grown by ECR-CVD
By Ferrero S. Mandracci P. Cicero G. Giorgis F. Pirri C.F. Barucca G.
Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. :