Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization

By Kammler M.   Reinking D.   Hofmann K.R.   Horn-von Hoegen M.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 29-33

Elsevier

Access to resources Recommend Favorite

A medium energy ion scattering study of metal-on-metal epitaxy and surfactant-mediated growth for the Au on Cu(111) system

By Noakes T.C.Q.   Bailey P.  

Thin Solid Films, Vol. 394, Iss. 1, 2001-08 ,pp. : 15-22

Elsevier

Access to resources Recommend Favorite

Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55- m photodetector applications

By Liu J.L.   Radetic T.   Tang Y.S.   Teng D.   Jin G.   Luo Y.H.   Wan J.   Gronsky R.   Wang K.L.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 54-56

Elsevier

Access to resources Recommend Favorite

Microstructure of semiconducting MnSi 1.7 and -FeSi 2 layers grown by surfactant-mediated reactive deposition epitaxy

By Tatsuoka H.   koga T.   Matsuda K.   Nose Y.   Souno Y.   Kuwabara H.   Brown P.D.   Humphreys C.J.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 231-235

Elsevier

Access to resources Recommend Favorite

Surfactant‐Mediated Conformal Overgrowth of Core–Shell Metal–Organic Framework Materials with Mismatched Topologies

By  

SMALL, Vol. 11, Iss. 41, 2015-11 ,pp. : 5551-5555

John Wiley & Sons Inc

Access to resources Recommend Favorite