Characteristics of interfacial bonding distribution of Gd 2 O 3 -GaAs structure

Author： Yang J.-K.   Kang M.-G.   Park H.-H.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.67, Iss.1, 2002-09, pp. : 161-167

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Improvement of the scintillation properties of Gd3Ga3Al2O12:Ce,B single crystals having tailored defect structure

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 9, 2015-09 ,pp. : 530-534

John Wiley & Sons Inc

Access to resources Recommend Favorite

Improvement of the scintillation properties of Gd3Ga3Al2O12:Ce,B single crystals having tailored defect structure

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 1862-6254, Iss. 9, 2015-09 ,pp. : 530-534

John Wiley & Sons Inc

Access to resources Recommend Favorite

Description of the frequency behaviour of metal-SiO 2 -GaAs structure characteristics by electrical equivalent circuit with constant phase element

By Kochowski S.   Nitsch K.  

Thin Solid Films, Vol. 415, Iss. 1, 2002-08 ,pp. : 133-137

Elsevier

Access to resources Recommend Favorite

Preparation and Optical Properties of Transparent (Ce,Gd)3Al3Ga2O12 Ceramics

By  

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol. 98, Iss. 8, 2015-08 ,pp. : 2352-2356

John Wiley & Sons Inc

Access to resources Recommend Favorite

Effect of GaAs surface treatments using HCl or (NH 4 ) 2 S x solutions on the interfacial bonding states induced by deposition of Au

By Kang M.-G.   Park H.-H.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 437-443

Elsevier

Access to resources Recommend Favorite