Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

Author： Peng D.Z.   Zan H.W.   Shih P.S.   Chang T.C.   Lin C.W.   Chang C.Y.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.67, Iss.3, 2002-09, pp. : 641-645

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Application of hot-wire chemical vapor-deposited Si:H films in thin film transistors and solar cells

By Rath J.K.   Stannowski B.   van Veenendaal P.A.T.T.   van Veen M.K.   Schropp R.E.I.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 320-329

Elsevier

Access to resources Recommend Favorite

A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors

By Kim C.-H.   Jung S.-H.   Jeon J.-H.   Han M.-K.  

Thin Solid Films, Vol. 397, Iss. 1, 2001-10 ,pp. : 4-7

Elsevier

Access to resources Recommend Favorite

Thin film poly-Si formation by Cat-CVD method and its application for solar cells

By Niira K.   Senta H.   Hakuma H.   Komoda M.   Okui H.   Fukui K.   Arimune H.   Shirasawa K.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 315-319

Elsevier

Access to resources Recommend Favorite

Preparation of poly-Si films by Cat-CVD for thin film transistor

By Sunayama H.   Yamada K.   Karasawa M.   Ishibashi K.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 226-229

Elsevier

Access to resources Recommend Favorite

Characterization of Si and SiOx films deposited in very high‐frequency excited atmospheric‐pressure plasma and their application to bottom‐gate thin film transistors

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 7, 2015-07 ,pp. : 1571-1577

John Wiley & Sons Inc

Access to resources Recommend Favorite