Study of the recombination properties of thermostable radiation defects in p-n structures manufactured in high resistivity neutron transmutation-doped silicon

Author： Korshunov F.P.   Zhdanovich N.E.   Marchenko I.G.   Karas V.I.   Troschinskii V.T.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.70, Iss.2, 2003-03, pp. : 193-196

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