From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters

By Sée J.   Dollfus P.   Galdin S.   Hesto P.  

Journal of Computational Electronics, Vol. 5, Iss. 1, 2006-03 ,pp. : 35-48

Springer Publishing Company

Access to resources Recommend Favorite

Effect of Nano-Scale Additions on the Enhancement of Superconductivity in Y-Ba-Cu-O Materials

By Chen Shih-Yun  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 857-863

Springer Publishing Company

Access to resources Recommend Favorite

Efficient and realistic device modeling from atomic detail to the nanoscale

By Fonseca J.   Kubis T.   Povolotskyi M.   Novakovic B.   Ajoy A.   Hegde G.   Ilatikhameneh H.   Jiang Z.   Sengupta P.   Tan Y.   Klimeck G.  

Journal of Computational Electronics, Vol. 12, Iss. 4, 2013-12 ,pp. : 592-600

Springer Publishing Company

Access to resources Recommend Favorite

Models for numerical device simulations of crystalline silicon solar cells—a review

By Altermatt Pietro  

Journal of Computational Electronics, Vol. 10, Iss. 3, 2011-09 ,pp. : 314-330

Springer Publishing Company

Access to resources Recommend Favorite

Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Sée J.   Dollfus P.   Galdin-Retailleau S.   Hesto P.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 449-453

Springer Publishing Company

Access to resources Recommend Favorite