Computer simulation of ion channeling in Si containing structurally relaxed point defects

Author: Lulli G.   Albertazzi E.   Bianconi M.   Balboni S.  

Publisher: Elsevier

ISSN: 0168-583X

Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.211, Iss.1, 2003-09, pp. : 50-54

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