Preparation and Properties of Bi 4 − x Nd x Ti 3 O 12 Thin Films by Chemical Solution Deposition

By Sakamoto Wataru  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 339-343

Springer Publishing Company

Access to resources Recommend Favorite

Electrical properties of Ga 2 O 3 -based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

By Liu G.   Shan F.   Park J.   Lee W.   Lee G.   Kim I.   Shin B.   Yoon S.  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 145-149

Springer Publishing Company

Access to resources Recommend Favorite

Synthesis and properties of ferroelectric Si-doped (Bi, Nd) 4 Ti 3 O 12 thin films by chemical solution deposition

By Sakamoto Wataru   Mizutani Yu-ki   Iizawa Naoya   Yogo Toshinobu   Hayashi Takashi   Hirano Shin-ichi  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 293-297

Springer Publishing Company

Access to resources Recommend Favorite

Phase Formations and Electrical Properties of Various (Bi, La) 4 Ti 3 O 12 Thin Films by Chemical Solution Deposition

By Lee Won-Jae  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 71-75

Springer Publishing Company

Access to resources Recommend Favorite

Current Conduction and Dielectric Behavior of High k-Y 2 O 3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

By Rastogi A.   Desu S.  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 121-127

Springer Publishing Company

Access to resources Recommend Favorite