The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN

Author: Ping A.   Chen Q.   Yang J.   Khan M.   Adesida I.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.27, Iss.4, 1998-04, pp. : 261-265

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Abstract