![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Ping A. Chen Q. Yang J. Khan M. Adesida I.
Publisher: Springer Publishing Company
ISSN: 1543-186X
Source: Journal of Electronic Materials, Vol.27, Iss.4, 1998-04, pp. : 261-265
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Miller Stephen Holloway Paul
Journal of Electronic Materials, Vol. 25, Iss. 11, 1996-11 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Schmitz A. Ping A. Khan M. Chen Q. Yang J. Adesida I.
Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. :