Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

Author： Johnstone D. Golding T.D. Hellmer R. Dinan J.H. Carmody M.

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.36, Iss.8, 2007-08, pp. : 832-836

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates

By Wijewarnasuriya Priyalal

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 1110-1117

Springer Publishing Company

Access to resources Recommend Favorite

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

By Hu Weida

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 981-985

Springer Publishing Company

Access to resources Recommend Favorite

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

By Reddy M.

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1706-1716

Springer Publishing Company

Access to resources Recommend Favorite

HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

By Almeida L. Dhar N. Martinka M. Dinan J.

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 754-759

Springer Publishing Company

Access to resources Recommend Favorite

Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes

By Perrais Gwladys Gravrand Olivier Baylet Jacques Destefanis Gerard Rothman Johan

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 963-970

Springer Publishing Company

Access to resources Recommend Favorite