Numerical Modeling of IR-Laser-Irradiated HgCdTe

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.39, Iss.10, 2010-10, pp. : 2220-2232

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

HgCdTe: Recent Trends in the Ultimate IR Semiconductor

By Kinch Michael

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 1043-1052

Springer Publishing Company

Access to resources Recommend Favorite

Numerical simulation of clustering phenomena for point-defects in HgCdTe

By Sugiyama Iwao Kajihara Nobuyuki Miyamoto Yoshihiro

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 616-620

Springer Publishing Company

Access to resources Recommend Favorite

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

By D’Souza A.

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 986-991

Springer Publishing Company

Access to resources Recommend Favorite

Design and Modeling of HgCdTe nBn Detectors

By Itsuno A.

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1624-1629

Springer Publishing Company

Access to resources Recommend Favorite

Modeling of junction formation and drive-in in ion implanted HgCdTe

By Holander-Gleixner S. Williams B. Robinson H. Helms C.

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 629-634

Springer Publishing Company

Access to resources Recommend Favorite