Author: Tennant W.
Publisher: Springer Publishing Company
ISSN: 1543-186X
Source: Journal of Electronic Materials, Vol.39, Iss.7, 2010-07, pp. : 1030-1035
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Planar n -on- p HgCdTe FPAs for LWIR and VLWIR Applications
By Wollrab R.
Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. :
Status of p -on- n Arsenic-Implanted HgCdTe Technologies
By Mollard L.
Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. :
Behavior of p-type dopants in HgCdTe
By Berding M. Sher A. Schilfgaarde M.
Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. :