Structural and Electronic Properties of Type I Clathrates M 8 Ga 16 Ge 30 (M = Ba, Sr, Yb) from First-Principles Calculations

By Li D.C.  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 1298-1303

Springer Publishing Company

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Valence Band Studies of p - and n -Type Ba 8 Ga 16 Ge 30 Using High-Resolution Photoelectron Spectroscopy

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Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 769-772

Springer Publishing Company

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Carrier Doping in the Type VIII Clathrate Ba 8 Ga 16 Sn 30 Through Sb Substitution

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Springer Publishing Company

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Effect of Al Substitution on the Thermoelectric Properties of the Type VIII Clathrate Ba 8 Ga 16 Sn 30

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The use of mobile devices for information sharing in a technology-supported model of care in A&E

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International Journal of Electronic Healthcare, Vol. 3, Iss. 1, 2006-11 ,pp. : 90-106

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