Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

Author： Chan P.-Y.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.40, Iss.8, 2011-08, pp. : 1685-1688

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