Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy

Author: Wang F.   Zhang R.   Lu D.Q.   Xiu X.Q.   Gu S.L.   Shen B.   Shi Y.   Ye Y.D.   Zheng Y.D.  

Publisher: Elsevier

ISSN: 0925-3467

Source: Optical Materials, Vol.23, Iss.1, 2003-07, pp. : 123-126

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract