Boron diffusion in silicon: the anomalies and control by point defect engineering

Author: Shao L.   Liu J.   Chen Q.Y.   Chu W.-K.  

Publisher: Elsevier

ISSN: 0927-796X

Source: Materials Science and Engineering: R: Reports, Vol.42, Iss.3, 2003-11, pp. : 65-114

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Abstract