Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates

By Fujikura H.   Kihara M.   Hasegawa H.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 22-25

Elsevier

Access to resources Recommend Favorite

Nonmagnetic control of spin transport in InGaAs quantum wells

By Koga T.   Nitta J.   Datta S.  

Physica E, Vol. 18, Iss. 1, 2003-05 ,pp. : 161-162

Elsevier

Access to resources Recommend Favorite

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

By Jiang L.   Lin T.   Wei X.   Wang G.H.   Zhang G.Z.   Zhang H.B.   Ma X.Y.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 23-27

Elsevier

Access to resources Recommend Favorite

Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

By Siegert J.   Gaarder A.   Marcinkevicius S.   Leon R.   Chaparro S.   Johnson S.R.   Sadofyev Y.   Zhang Y.H.  

Physica E, Vol. 18, Iss. 4, 2003-06 ,pp. : 541-546

Elsevier

Access to resources Recommend Favorite

GaAsN and GaInAsN/GaAs quantum wells grown on {111} substrates: growth conditions and optical properties

By Blanc S.   Arnoult A.   Carrere H.   Fontaine C.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 252-254

Elsevier

Access to resources Recommend Favorite