Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

Author： Rudamas C.   Martnez-Pastor J.   Gonzalez L.   Vinattieri A.   Colocci M.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 206-208

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