Deep modulation of conductance in Ag/PLZT/LSCO ferroelectric field-effect transistor

Author： Grekhov I.   Delimova L.   Liniichuk I.   Mashovets D.   Veselovsky I.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 640-642

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

By Kuznetsov V.I.   Werner K.   Radelaar S.   Metselaar J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 263-266

Elsevier

Access to resources Recommend Favorite

Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

By Sugii N.   Nakagawa K.   Yamaguchi S.   Park S.K.   Miyao M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 362-365

Elsevier

Access to resources Recommend Favorite

Detection Beyond Debye's Length with an Electrolyte‐Gated Organic Field‐Effect Transistor

By  

ADVANCED MATERIALS, Vol. 27, Iss. 5, 2015-02 ,pp. : 911-916

John Wiley & Sons Inc

Access to resources Recommend Favorite

The influence of medium conductivity on ECIS measurements with field‐effect transistor arrays

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 6, 2015-06 ,pp. : 1260-1265

John Wiley & Sons Inc

Access to resources Recommend Favorite

Tailoring Functional Interlayers in Organic Field‐Effect Transistor Biosensors

By  

ADVANCED MATERIALS, Vol. 27, Iss. 46, 2015-12 ,pp. : 7528-7551

John Wiley & Sons Inc

Access to resources Recommend Favorite