Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal-insulator transition

Author： Raychaudhuri A.K.   Kar S.   Ghosh A.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.18, Iss.1, 2003-05, pp. : 284-285

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