Continuous analytic I — V model for GS DG MOSFETs including hot-carrier degradation effects

Author: Bentrcia Toufik   Djeffal Faycal   Abdel Hamid Benhaya  

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.33, Iss.1, 2012-01, pp. : 14001-14006

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Abstract