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Journal of Semiconductors, Vol. 35, Iss. 1, 2014-01 ,pp. : 14008-14011

IOP Publishing

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Observation of threshold voltage instabilities in AlGaN/GaN MIS HEMTs

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High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation

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A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiN x capping on InAlN and AlGaN HEMTs for space applications

By Smith M D   O’Mahony D   Vitobello F   Muschitiello M   Costantino A   Barnes A R   Parbrook P J  

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Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer

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