Pyroactive Sensitive Element of Position IR-Detector Based on Thin Film PZT-Si Structures

ISSN： 0015-0193

Source： Ferroelectrics, Vol.288, Iss.1, 2003-01, pp. : 79-91

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Abstract

Pt-PZT-Pt/Ti-SiO₂/Si structures with (111)-oriented PZT (54/46) thin layer manufactured by RF magnetron sputtering were investigated by thermowave method including pyroelectric undersurface probing and "along surface" pyroelectric scanning in the modes of pyroelectric current and voltage. By using quadrant-diagonal electrode system the position-sensitive pyroelectric characteristics of such system were investigated in the mode of all main types of differential position-sensitive pyroelectric detectors of radiation. Experimental results are in a good agreement with obtained theoretical expressions for position characteristics for side-to-side, diagonal and top-to-top triangular configuration of 2-element differential system. The data on pyroelectric response-drive voltage loops investigations are presented and briefly discussed.