Author: Szafraniak I. Alexe M. Gösele U.
Publisher: Taylor & Francis Ltd
ISSN: 0015-0193
Source: Ferroelectrics, Vol.292, Iss.1, 2003-01, pp. : 23-28
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Direct wafer bonding : A new fabrication method for ferroelectric-silicon heterostructures
Le Journal de Physique IV, Vol. 08, Iss. PR9, 1998-12 ,pp. :
COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
Direct bonding of silicon wafers with a diffusion layer
By Voronkov V. Guk E. Kozlov V. Shuman V.
Technical Physics Letters, Vol. 24, Iss. 3, 1998-03 ,pp. :