Dielectric Properties of La Doped-Hexagonal BaTiO3 Single Crystal Grown by FZ Method

Author: Natsui Hidesada  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.378, Iss.1, 2009-01, pp. : 195-199

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Abstract

The oxygen-deficient hexagonal BaTiO3 shows huge dielectric constant. Because of the oxygen-deficient induced to change the valance from Ti4+ to Ti3+ and formed the charge imbalance in a lattice. However, this dielectric constant is easily disappeared when the oxygen-deficient is compensated. And it is difficult to control the amount of oxygen-deficient in hexagonal BaTiO3. In this study, the oxygen deficient is substituted by La to keep the charge imbalance. It was successful to retain the huge dielectric constant of La doped hexagonal BaTiO3. La3+ could induce to change the valance from Ti4+ to Ti3+. And it shows almost the same behavior on the complex plane of Z by an impedance measurement. La doped hexagonal BaTiO3 has a semiconductive behavior.