Author： Hong M. H. Samant A. V. Pirouz P.
Publisher： Taylor & Francis Ltd
ISSN： 0141-8610
Source： Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol.80, Iss.4, 2000-04, pp. : 919-935
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Dislocation Characterization in 4H-SiC Crystals
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :