Monte Carlo calculation of velocity-field characteristics in II-VI compound semiconductors

Author： Dutta A. Mallick P. S. Mukhopadhyay D.

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.84, Iss.3, 1998-03, pp. : 203-214

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II–VI semiconductor nanowires

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 22001-22005

IOP Publishing

Access to resources Recommend Favorite

The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors

By Hirsch L. Yu Zhonghai Buczkowski S. Myers T. Richards-Babb M.

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 534-541

Springer Publishing Company

Access to resources Recommend Favorite

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

By Irvine S. Stafford A. Ahmed M. Brown A. Kheyrandish H.

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 723-727

Springer Publishing Company

Access to resources Recommend Favorite

Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

By Borzdov A. Pozdnyakov D. Borzdov V. Orlikovsky A. V’yurkov V.

Russian Microelectronics, Vol. 39, Iss. 6, 2010-11 ,pp. : 411-417

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

MBE-Grown II–VI and Related Nanostructures

By Sou I.

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 882-892

Springer Publishing Company

Access to resources Recommend Favorite