Author： Dai Yihong Comer Donald T. Comer David J.
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.92, Iss.2, 2005-02, pp. : 87-97
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Abstract
A bandgap voltage reference in a GaAs heterojunction bipolar transistor process is analysed and designed. The design provides an on-chip reference intended for use with more complex integrated circuits designed in this HBT process. Key design parameters of the HBT bandgap reference are presented and compared to a classical silicon bandgap reference. A practical operational amplifier for the reference is also presented. The prototype reference achieves a temperature coefficient of 7 ppm/°C over a temperature range of 0°C to 100°C. The voltage reference changes are measured at 0.1% with power supply voltage changes of ± 0.2 V.
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