Author： Ohkuni H. Inada Y. Tokiwa Y. Sakurai K. Settai R. Honma T. Haga Y. Yamamoto E. Yamagami H. Takahashi S. Yanagisawa T.
Publisher： Taylor & Francis Ltd
ISSN： 1463-6417
Source： Philosophical Magazine B, Vol.79, Iss.7, 1999-07, pp. : 1045-1077
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Abstract
We have succeeded in growing a high-quality single crystal of URu2Si2 with a residual resistivity ratio of 255 and performed magnetoresistance and de Haasvan Alphen (dHvA) experiments. The dHvA oscillations were observed clearly in both the normal and superconducting mixed states. From the magnetoresistance experiments, it is concluded that URu2Si2 is a compensated metal with equal carrier numbers of electrons and holes. In the dHvA experiments we observed three kinds of Fermi surfaces. We studied precisely the Fermi surface properties in both the normal and mixed states. The dHvA frequency does not change in magnitude between the normal and mixed states, while the cyclotron effective mass is reduced, and the corresponding Dingle temperature or scattering rate of the conduction electron increases in the mixed state.
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