Author: GARCÍA-MUÑOZ J. L. AMBOAGE M. HANFLAND M. ALONSO J. A. MARTÍNEZ-LOPE M. J. MORTIMER R.
Publisher: Taylor & Francis Ltd
ISSN: 0895-7959
Source: International Journal of High Pressure Research, Vol.23, Iss.1-2, 2003-03, pp. : 171-175
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Inhomogeneity in Doped Mott Insulator
By Lee D-H.
Journal of Low Temperature Physics, Vol. 131, Iss. 3-4, 2003-05 ,pp. :
A New Study on the Doped Mott–Hubbard Insulator
By Bickers N.E.
Journal of Low Temperature Physics, Vol. 131, Iss. 3-4, 2003-05 ,pp. :
By Bauer Johannes D. Luchitskaia Margarita Bayarjargal Lkhamsuren Morgenroth Wolfgang Winkler Björn
International Journal of High Pressure Research, Vol. 33, Iss. 3, 2013-08 ,pp. :
International Journal of High Pressure Research, Vol. 24, Iss. 1, 2004-03 ,pp. :