Re-examination of multiple-quantum-barrier for semiconductor heterostructure lasers

Author: Yang R.Q.   Zhou Y.   Pei S.S.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.20, Iss.2, 1995-02, pp. : 203-206

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Abstract

We have shown that the enhancement of carrier confinement by introducing a multiple-quantum-barrier into the cladding region of semiconductor heterostructure lasers is substantially less than what was previously predicted, because the reflectivity of an electron incident on a multiple-quantum-barrier depends on its transverse momentum, thereby limiting the expected improvement in laser characteristics.