Author： Ibrahim I.S. Schweigert V.A. Badalian S.M. Peeters F.M.
Publisher： Academic Press
ISSN： 0749-6036
Source： Superlattices and Microstructures, Vol.22, Iss.2, 1997-09, pp. : 203-207
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Abstract
We investigate the magnetoresistance of a two-dimensional electron gas (2DEG) in the presence of a magnetic tunnel barrier of mum width. The classical 2D electrostatic problem is solved numerically from which we obtain the potential, electric field and current distribution in the 2DEG. We found that most of the electrons are injected at the edges of the magnetic barrier. Our results reproduce the positive background resistance observed by M. L. Leadbeater et al. [Phys. Rev. B52, R8629 (1995)] in the magnetoresistance of a nonplanar GaAs/AlGaAsheterojunction.
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