Electronic structure of (311)-InAs monolayers embedded in GaAs

Author： Saito T.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.23, Iss.2, 1998-02, pp. : 219-223

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots

By Bairamov B.   Voitenko V.   Zakharchenya B.   Toporov V.   Henini M.   Kent A.  

Physics of the Solid State, Vol. 41, Iss. 5, 1999-05 ,pp. : 763-766

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

First-principle calculation of GaAs electronic structure by doping with Mn and P

By  

Journal of Physics: Conference Series , Vol. 153, Iss. 1, 2009-03 ,pp. : 471-475

IOP Publishing

Access to resources Recommend Favorite

Electronic structure of BSb defective monolayers and nanoribbons

By Ersan F   Gökoğlu G   Aktürk E  

Journal of Physics: Condensed Matter, Vol. 26, Iss. 32, 2014-08 ,pp. : 325303-325310

IOP Publishing

Access to resources Recommend Favorite

Electronic structure at the PTCDA/GaAs and NTCDA/GaAs interfaces

By Komolov S.   Aliaev Yu.   Potyupkin N.   Buzin I.  

Technical Physics, Vol. 50, Iss. 2, 2005-02 ,pp. : 213-216

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

ON THE ATOMIC STRUCTURE OF LIQUID GaAs

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C8, 1985-12 ,pp. : C8-97-C8-100

Edp Sciences

Access to resources Recommend Favorite