Self-adjusting formation of a lateral confinement potential in Si/SiGe heterostructures with compensating pn layers

Author: Wieser U.   Skaberna S.   Kunze U.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.23, Iss.5, 1998-05, pp. : 981-984

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Abstract