Exciton binding energies in GaN/Al_xGa_{1 - x}N pseudomorphic quantum wells

By Jeon J.   Sanders G.D.   Kim K.W.   Littlejohn M.A.  

Superlattices and Microstructures, Vol. 27, Iss. 1, 2000-01 ,pp. : 53-58

Academic Press

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Temperature dependence of excitonic transitions in Al_xGa_{1 - x}As/GaAs quantum wells

By Lourenço S.A.   Dias I.F.L.   Duarte J.L.   Laureto E.   Iwamoto H.   Meneses E.A.   Leite J.R.  

Superlattices and Microstructures, Vol. 29, Iss. 3, 2001-03 ,pp. : 225-231

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Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q.   Fonseca A.L.A.   Nunes O.A.C.  

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

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Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa 1 - xAs single quantum wells

By Freire A.K.   Farias G.A.   Freire V.N.   Ferreira E.C.  

Superlattices and Microstructures, Vol. 23, Iss. 5, 1998-05 ,pp. : 1015-1018

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Exciton relaxation in Ga_{1 - x} In_x As/GaAs self-organized quantum dots

By Shen J.X.   Oka Y.   Cheng H.H.   Tsai F.Y.   Lee C.P.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 131-136

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