Intersubband transitions in In_xAl_{(1 − x)}N/In_yGa_{(1 − y)}N quantum well operating at 1.55 μm

By Dakhlaoui Hassen  

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 97304-97308

IOP Publishing

Access to resources Recommend Favorite

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 36-39

IOP Publishing

Access to resources Recommend Favorite

Quantum tight-binding chains with dissipative coupling

By  

New Journal of Physics, Vol. 17, Iss. 4, 2015-04 ,pp. : 793-805

IOP Publishing

Access to resources Recommend Favorite

Quantum point contacts on InGaAsInP heterostructures

By Engels G.   Tietze M.   Appenzeller J.   Hollfelder M.   Schapers T.   Luth H.  

Superlattices and Microstructures, Vol. 23, Iss. 6, 1998-06 ,pp. : 1249-1255

Academic Press

Access to resources Recommend Favorite

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovski L.   Velikovski I.   Veretekha A.   Krasovitski D.   Pavlenko M.   Petrov S.   Pogorel’ski M.   Pogorel’ski Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chaly V.  

Technical Physics Letters, Vol. 32, Iss. 11, 2006-11 ,pp. : 960-963

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite