Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates

Author： Tabata A.   Martini S.   Quivy A.A.   Ceschin A.M.   Leite J.R.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.25, Iss.1, 1999-01, pp. : 405-411

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Formation of highly anisotropic GaAs quantum dots on GaAs(001) substrates

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 303-306

IOP Publishing

Access to resources Recommend Favorite

OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-163-C5-167

Edp Sciences

Access to resources Recommend Favorite

Electro-optic processes in InGaAs/GaAs quantum wires grown by MBE on patterned substrates

By Rinaldi R.   deVittorio M.   Cingolani R.   Marti U.   Reinhart F.K.  

Superlattices and Microstructures, Vol. 22, Iss. 2, 1997-09 ,pp. : 237-241

Academic Press

Access to resources Recommend Favorite

Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs

By Aronzon B.   Granovsky A.   Davydov A.   Danilov Yu.   Zvonkov B.   Ryl’kov V.   Uskova E.  

Physics of the Solid State, Vol. 49, Iss. 1, 2007-01 ,pp. : 171-177

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

By  

New Journal of Physics, Vol. 7, Iss. 1, 2005-05 ,pp. : 2161-2171

IOP Publishing

Access to resources Recommend Favorite