Author： Kim G. Koh K.M. Kim C.H.
Publisher： Academic Press
ISSN： 0749-6036
Source： Superlattices and Microstructures, Vol.29, Iss.1, 2001-01, pp. : 51-55
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.
Related content
Access to resources
Recommend
Resonant and non-resonant tunneling through a double barrier
EPL (EUROPHYSICS LETTERS), Vol. 70, Iss. 6, 2005-06 ,pp. :